| PART |
Description |
Maker |
| CGHV27200 |
200 W, 2500-2700 MHz, GaN HEMT for LTE
|
Cree, Inc
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| CGH27015F |
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| CGH27060F |
60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| MAFR-000226-000001 |
Circulator 2500 - 2700 MHz
|
M/A-COM Technology Solutions, Inc.
|
| CMPA2560025F |
CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
|
Cree, Inc
|
| MAGX-001214-SB0PPR MAGX-001214-125L00 MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| PTFA261702E |
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz
|
Infineon Technologies AG
|
| ADL532008 ADL5320-EVALZ ADL5320ARKZ-R7 ADL5320 |
400 MHz to 2700 MHz Pre-driver RF Amplifier 400 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
400 MHz to 2700 MHz RF Driver Amplifier
|
Analog Devices, Inc.
|
| CGHV27015S-AMP1 CGHV27015S-TR |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| CG2H80060D |
60 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
|
